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  Datasheet File OCR Text:
 1N5817-1N5819
Discrete POWER & Signal Technologies
1N5817 - 1N5819
Features * *
1.0 ampere operation at TA = 90C with no thermal runaway. For use in low voltage, high frequency inverters free wheeling, and polarity protection applications.
1.0 min (25.4)
Dimensions in inches (mm)
0.205 (5.21) 0.160 (4.06)
DO-41
COLOR BAND DENOTES CATHODE
0.107 (2.72) 0.080 (2.03) 0.034 (0.86) 0.028 (0.71)
1.0 Ampere Schottky Barrier Rectifiers
Absolute Maximum Ratings*
Symbol
IO if(surge) PD RJA Tstg TJ
TA = 25C unless otherwise noted
Parameter
Average Rectified Current .375 " lead length @ TA = 90C Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Storage Temperature Range Operating Junction Temperature
Value
1.0
Units
A
25 1.25 12.5 80 -65 to +125 -65 to +125
A W mW/C C/W C C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics
Parameter
TA = 25C unless otherwise noted
Device
1N5817 1N5818 30 21 30 0.5 10 550 875 110 1N5819 40 28 40 20 14 20
Units
V V V mA mA mV mV pF
Peak Repetitive Reverse Voltage Maximum RMS Voltage DC Reverse Voltage (Rated VR) TA = 25C TA = 100C @ 1.0 A @ 3.0 A Maximum Reverse Current @ rated VR Maximum Forward Voltage Typical Junction Capacitance VR = 4.0 V, f = 1.0 MHz
450 750
600 900
(c)1998 Fairchild Semiconductor Corporation
1N5817-1N5819
Schottky Barrier Rectifiers
(continued)
Typical Characteristics
Forward Current Derating Curve
1 FORWARD CURRENT (A)
Forward Characteristics
20 FORWARD CURRENT (A) 10
1N5817
0.75
SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" 9.5 mm LEAD LENGTHS
1N5819
0.5
1
1N5818
0.25
0
T J = 25C Pulse Width = 300S 1% Duty Cycle
0
20
40 60 80 100 LEAD TEMPERATURE ( C)
120
140
0.1 0.2
0.4
0.6 0.8 1 1.2 1.4 1.6 FORWARD VOLTAGE (V)
1.8
2
Non-Repetitive Surge Current
30 FORWARD SURGE CURRENT (A) 25 CAPACITANCE (pF) 20 15 10 5 0
8.3ms Single Half Sine-Wave JEDEC Method
Junction Capacitance
400 200
T J = 25C
100 80 60 40 20 10 0.1
1
2
5 10 20 50 NUMBER OF CYCLES AT 60Hz
100
0.5 1 5 10 REVERSE VOLTAGE (V)
40 60 100


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